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PROPERTIES OF THE II-VI COMPOUND SEMIC0NDUCTORS

Author - d.w.palmer@semiconductors.co.uk
When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2008.03.

PLEASE SEE BELOW FOR PROPERTIES OF :
Zn0, ZnS, ZnSe, ZnTe         CdS, CdSe, CdTe         HgS, HgSe, HgTe

These semiconductor materials can crystallise in either the cubic zinc-blende (sphalerite) (beta) phase or the hexagonal wurzite (alpha) phase, but, for each material, one or other of those phases is thermodynamically more stable at 300K, as indicated. Each measured property value at 300K, as given in the tables, is likely, unless otherwise stated, to be the value for the phase that is stable at 300K or for the phase that is the more easily produced. The data for the lattice parameters are quoted from A R West "Basic Solid State Chemistry" (Wiley 1988), which states them to be from R W G Wykoff, "Crystal Structures" (Wiley 1971) Vol 1. The densities of the zinc-blende structures given in the tables below have been obtained by calculation using the respective lattice parameters from there. Data shown without references are quoted from commercial or other documents where the original sources of the data are not stated.

To authors of research papers concerning II-VI semiconductors:
I shall be glad to receive copies of your papers that contain new or updated data
that could be included in the tables below.

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Property \ Material . ZnO . ZnS . ZnSe . ZnTe . Zinc Blende Lattice Parameter a0 at 300K . . . 0.541 nm 0.567 nm 0.610 nm Zinc Blende Nearest-Neighbour Dist. at 300K . . . 0.234 nm 0.246 nm 0.264 nm Zinc Blende Density at 300K . . . 4.11 g.cm-3 5.26 g.cm-3 5.65 g.cm-3 Wurzite Lattice Parameters at 300K a0 c0 c0/a0 u   0.32495 nm 0.52069 nm 1.602 0.345   0.3811 nm 0.6234 nm 1.636     0.398 nm 0.653 nm 1.641     0.427 nm 0.699 nm 1.637   Wurzite Nearest Neighbour Dist. at 300K calculated as 0.375c0 which would be correct in ideal hexagonal structure of c0//a0=1.633 0.195 nm 0.234 nm 0.245 nm 0.262 nm Wurzite Density at 300K 5.606 g.cm-3 Handbook of C & P, 53rd Editn, 1972 3.98 g.cm-3 Handbook of C & P, 53rd Editn, 1972 . . . . . . Phase Stable at 300K wurzite Smart & Moore 1995, p.208 blende & wurzite both occur in nature blende blende Melting Point 1975 oC Handbook of C & P, 53rd Editn, 1972 1850 oC (wurzite, 150 atm.) 1100 oC 1240 oC Thermal Conductivity W.cm-1.oC-1 0.6 . . . 0.18 . . . Specific Heat . . . . . . 0.356 J.g-1.oC-1 . .. Linear Expansion Coefficient in oC-1 for zinc-blende structure . . . ... 7.6x10-6 . . . Linear Expansion Coefficient in oC-1 for wurzite structure a0: 6.5x10-6 c0: 3.0x10-6 . . . . . . . . . . Zn0 ZnS ZnSe ZnTe Dielectric Const, low frequency zinc-blende structure: wurzite structure: . . . 8.9 mean, 9.6 9.1 Singh 1993, p.840 7.4 Singh 1993, p.840 Refractive Index zinc-blende structure: wurzite structure:           2.008, 2.029 Handbook of C & P, 53rd Editn, 1972   2.368 Handbook of C & P, 53rd Editn, 1972   2.356, 2.378 Handbook of C & P, 53rd Editn, 1972   2.5 Singh 1993, p.840   2.72 Singh 1993, p.840 Energy Gap Eg at 300 K zinc blende structure: wurzite structure:   . 3.4 eV, Direct   3.68 eV, Direct 3.911 eV, Direct   2.8215 eV, Direct .   2.394 eV, Direct . Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . cm-3 . . . cm-3 Ionisation Energies of Donors Extensive Tabulation . . . Desnica 1998 Desnica 1998 Desnica 1998 Ionisation Energy of Aluminium Donor (additional information: Desnica 1998) . . . . . . 25.6 meV Bhargava 1982 . 26 meV Neumark 1988 18.3 meV Pautrat etc 1985 . 18 meV Allen 1995 Electron Effective Mass m*/m0 . . . . . . 0.21 Singh 1993, p. 840 0.2 Singh 1993, p. 840 Electron Hall Mobility at 300 K for n=lowish . . . 165 cm2/V.s 500 cm2/V.s Singh 1993, p.840 340 cm2/V.s Singh 1993, p.840 Ionisation Energies of Acceptors Extensive Tabulation . . . Desnica 1998 Desnica 1998 Desnica 1998 Ionisation Energy of Phosphorus Acceptor (additional information: Desnica 1998) . . . . . . meV 85.3 meV Neu et al 1998 63.5 meV Bhargava 1982 Pautrat etc 1985 Hole Effective Mass m*dos/ m0 . . . . . . 0.6 Singh 1993, p.840 circa 0.2 Singh 1993, p.840 Hole Hall Mobility at 300 K for p=lowish . . . 5 cm2/V.s 30 cm2/V.s Singh 1993, p. 840 100 cm2/V.s Singh 1993, p. 840 . ZnO ZnS ZnSe ZnTe Return to "SEMICONDUCTORS INFORMATION" Home Page Return to Top of this Page Property \ Material CdS . CdSe . CdTe . Zinc Blende Lattice Parameter a0 at 300K 0.582 nm 0.608 nm 0.648 nm Zinc Blende Nearest-Neighbour Dist. at 300K 0.252 nm 0.263 nm 0.281 nm Zinc Blende Density at 300K 4.87 g.cm-3 5.655 g.cm-3 5.86 g.cm-3 Wurzite Lattice Parameters at 300K a0 = 0.4135 nm c0 = 0.6749 nm a0 = 0.430 nm c0 = 0.702 nm a0 =. . . nm c0 =. . . nm Wurzite Nearest-Neighbour Dist. at 300K . . . nm . . . nm . . . nm Wurzite Density at 300K 4.82 g.cm-3 5.81 g.cm-3 . . . g.cm-3 Phase Stable at 300K Wurzite Wurzite Zinc Blende Melting Point Handbook of C & P, 53rd Editn, 1972 1750 oC (wurzite, 100 atm.) >1350 oC 1041 oC (Zinc Blende) Thermal Conductivity at 20oC ... ... 0.062 W.cm-1.oC-1 Specific Heat ... ... 0.21 J.g-1.oC-1 Linear Expansion Coefficient at 20oC ... ... 5.9x10-6 oC-1 . CdS CdSe CdTe Dielectric Const, low frequency zinc-blende structure: wurzite structure: Singh 1993 . . . . 10.2(pl), 9.3(pr) . 10.2 . . Refractive Index zinc-blende structure: wurzite structure:           2.506, 2.529 Handbook of C & P, 53rd Editn, 1972   2.5 Singh 1993, p.840   2.72 Singh 1993, p.840 Energy Gap Eg at 300 K zinc blende structure: wurzite structure: 2.50 eV, Direct 2.50 eV, Direct Singh 1993 . 1.714 eV, Direct Shan et al 2004 1.474 eV, Direct Singh 1993 . Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . cm-3 Ionisation Energies of Donors Extensive Tabulation Desnica 1998 Desnica 1998 Desnica 1998 Ionisation Energy of Aluminium Donor (additional information: Desnica 1998) . . . . . . 14.05 meV Francou etc 1990 Electron Effective Mass mtr/m0 . . . . . . . . . Electron Effective Mass ml/m0 . . . . . . . . . Electron Hall Mobility at 300 K for n=lowish 340 cm2/V.s . . . cm2/V.s 1050 cm2/V.s Electron Hall Mobility at 77 K for n= . . . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s Ionisation Energies of Acceptors Extensive Tabulation Desnica 1998 Desnica 1998 Desnica 1998 Ionisation Energy of Phosphorus Acceptor (additional information: Desnica 1998) . . . meV 83±6 meV Henry etc 1971 68.2 meV Pautrat etc 1985 . 50 meV Stadler etc 1995 Hole Effective Mass / mo . . . . . . . . . Hole Hall Mobility at 300 K for p=lowish 340 cm2/V.s . . . cm2/V.s 100 cm2/V.s Hole Hall Mobility at 77 K for p=. . . cm-3 . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s . CdS CdSe CdTe Return to "SEMICONDUCTORS INFORMATION" Home Page Return to Top of this Page Property \ Material . HgS . HgSe . HgTe . Zinc Blende Lattice Parameter a0 at 300K 0.58517 nm 0.6085 nm 0.6453 nm Zinc Blende Nearest-Neighbour Dist. at 300K 0.253 nm 0.264 nm 0.279 nm Zinc Blende Density at 300K 7.72 g.cm-3 8.22 g.cm-3 8.12 g.cm-3 Wurzite Lattice Parameters at 300K a0=. . . nm c0=. . . nm a0=. . . nm c0= . . . nm a0=. . . nm c0=. . . nm Wurzite Nearest-Neighbour Dist. at 300K . . . nm . . . nm . . . nm Wurzite Density at 300K . . . g.cm-3 . . . g.cm-3 . . . g.cm-3 Phase Stable at 300K . . . . . . . . . Melting Point 583.5 oC (zinc blende) 790 oC 670 oC Thermal Conductivity ... ... ... Specific Heat ... ... ... Linear Expansion Coefficient ... ... ... . HgS HgSe HgTe Dielectric Const, low frequency zinc-blende structure: wurzite structure: . . . . . . Energy Gap Eg at 300 K zinc blende structure: wurzite structure: . . . . . . . . . Intrinsic Carrier Conc. at 300 K . . . cm-3 . . . cm-3 . . . cm-3 Ionisation Energy of . . . Donor . . . meV . . . meV . . . meV Electron Effective Mass mtr / m0 . . . . . . . . . Electron Effective Mass ml / m0 . . . . . . . . . Electron Hall Mobility at 300 K for n= . . . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s Electron Hall Mobility at 77 K for n= . . . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s Ionisation Energy of . . . Acceptor . . . meV . . . meV . . . meV Hole Effective Mass / mo . . . . . . . . . Hole Hall Mobility at 300 K for p= . . .cm-3 . . . cm2/V.s . . cm2/V.s . . . cm2/V.s Hole Hall Mobility at 77 K for p=. . . cm-3 . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s . HgS HgSe HgTe Additional information will be included when available.

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INDIVIDUAL REFERENCES : Allen J W, 1995, Semicond. Sci. Technol. 10, 1049 Bhargava R N, 1982, J. Cryst. Growth 59, 15 Desnica U V, 1998, Prog. Crystal Growth and Charact. 36, 291-357 . . . . "Doping Limits in II-VI Compounds - Challenges, Problems and Solutions" Francou J M, Saminadayer K and Pautrat J, 1990, Phys. Rev. B 41, 12035 Handbook of Chemistry & Physics, Edition 53 (CRC Press, 1972-1973) Henry C H, Nassau K and Shiever J W, 1970, Phys. Rev. B 2, 545 Neumark G F, 1988, Phys. Rev. B 37, 4778 Neu G, Morhain C, Tournie E and Faurie JP, 1998, J. Cryst. Growth 184/185 515 Pautrat J, Francou J M, Magnea N, Molva E and Saminadayar K, 1985, J. Cryst. Growth 72, 194 Shan W, Walukiewicz W, Ager J W III, Yu K M, Wu J and Haller E E, 2004, Appl Phys Lett 84, 67 Singh J, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill) Smart L and Moore E, 1995, "Solid State Chemistry", (Chapman & Hall: 2nd Edition) Stadler W, Hoffman D M, Alt H C, Muschik T, Meyer B K, Weigel E, Müller-Wogt G, Salk M, Rupp E . . and Benz K W, 1995, Phys. Rev. B 51, 10619 INFORMATION SOURCES FOR OTHER DATA : O Madelung (Ed.), 1991, "Data in Science and Technology: Semiconductors" (Springer-Verlag)

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