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PROPERTIES OF THE III-V COMPOUND SEMIC0NDUCTORS Author - d.w.palmer@semiconductors.co.uk
When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2006.02.
PLEASE SEE BELOW FOR PROPERTIES OF :
      AlP, AlAs, AlSb       GaP, GaAs, GaSb       InP, InAs, InSb
The zinc-blende-structure densities stated in the tables below have been obtained by calculation using the lattice parameter values.

Energy-gap values for AlxGa1-xAs

Energy-gap values for InxGa1-xAs

Properties of the III-Nitrides

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LINKS Semiconductor Research Laboratories Forthcoming Semiconductor Conferences Properties of Diamond, Silicon, Germanium Properties of II-VI Compounds Properties of III-Nitrides Semiconductor Publications (Books, Journals, Conf Proc) Fundamental Constants European & American Physics & Materials Societies Home Page of this Semiconductors Information Web-Site LINKS

Property \ Material . AlP . AlAs . AlSb . Structure Zinc Blende Zinc Blende . . . . Space Group F bar4 3m F bar4 3m F bar4 3m Lattice Parameter a0 at 300K quoted from Singh 1993 0.54635 nm 0.5660 nm 0.61355 nm Nearest Neighbour Distance at 300K . . . 0.2454 nm 0.265 nm Density at 300K . . . 3.717 g.cm-3 4.29 g.cm-3 Elastic Modulus c11 at 300 K . . . . 12.0x1011 dynes.cm-2 . . . . Linear Expansion Coeff. at 300 K . . . . ca. 5x10-6 K-1 . . . . LO Phonon Energy . . . 50.1 meV . . . TO Phonon Energy . . . 44.9 meV . . . Thermal Conductivity at 300 K . . . . . . Wcm-1K-1 . . . Melting Point . . . 2013 K . . . Dielectric Constant, Low/Lowish Frequency 9.8 10.06 12.04 Nature of Energy Gap Eg Indirect Indirect Indirect Energy Gap Eg at 300 K 2.45 eV 2.153 eV 1.615 eV Energy Gap Eg at ca. 0 K 2.505 eV (at 4 K) 2.229 eV (at 4 K) 1.686 eV (at 27 K) Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . . Ionisation Energy of Silicon Donor . . . . 70 meV . . . . . Electron Effective Mass / m0 . . . 0.1 (Singh 1993) 0.12 (Singh 1993) Electron Hall Mobility at 300 K for n = . . . . . . . . . cm2/V.s . . . . Electron Hall Mobility at 77 K for n = . . . . . . . . . . cm2/V.s . . . Ionisation Energy of Zinc Acceptor . . . . . . . meV . . . Light Hole Effective Mass mlh/m0 . . . . . . . . . Heavy Hole Effective Mass mhh/m0 . . . . . . . . . Hole Density of States Mass mdos/m0 . . . . . . 0.98 (Singh 1993) Hole Hall Mobility at 300 K for p = . . . cm-3 . . . . . . . cm2/V.s . . . Hole Hall Mobility at 77 K for p=. . . cm-3 . . . . . . . cm2/V.s . . . . . Property \ Material . AlP . AlAs . AlSb Return to "SEMICONDUCTORS INFORMATION" Home Page Return to Top of this Page Property \ Material . GaP . GaAs . GaSb . Structure (All Cubic) Zinc Blende Zinc Blende Zinc Blende Space Group F bar4 3m F bar4 3m F bar4 3m Lattice Parameter a0 at 300K 0.5451 nm 0.5653 nm 0.609 nm Nearest Neighbour Distance at 300K 0.2360 nm 0.2448 nm 0.264 nm Density at 300K 4.129 g.cm-3 5.318 g.cm-3 5.63 g.cm-3 Bond Energy . . . 6.52 eV/atom Harrison, 1980 . . . Elastic Modulus c11 at 300 K . . . . 11.9x1011 dynes.cm-2 . . . . . Linear Expansion Coeff. at 300 K . . . K-1 ca. 5.7x10-6 K-1 . . . K-1 LO Phonon Energy . . . 285.0 cm-1 . . . TO Phonon Energy . . . 267.3 cm-1 . . . Thermal Conductivity at 300 K . . . 0.5 Wcm-1K-1 . . . Melting Point . . . 1513 K . . . Dielectric Constant (f=0 to f=RF) 11.1 12.5 15.7 Nature of Energy Gap Eg Indirect Direct Direct Energy Gap Eg at 300 K 2.272 eV 1.424 eV 0.75 eV Energy Gap Eg at ca. 0 K 2.350 eV (at 0 K) 1.5191 eV (at 0 K) 0.8113 eV (at 2 K) Intrinsic Carrier Conc. at 300 K . . . 2.1x106 cm-3 . . . . Ionisation Energy of Silicon Donor . . . . 5.8 meV . . . . . Electron Effective Mass / m0 . . . 0.067 (Singh 1993) 0.042 (Singh 1993) Electron Hall Mobility at 300 K for n=1.3x1013 cm-3 . . . . 9200 cm2/V.s . . . . Electron Hall Mobility at 77 K for n=1.3x1013 cm-3 . . . . 2x105 cm2/V.s . . . . Ionisation Energy of Zinc Acceptor . . . . 30.6 meV . . . . . Light Hole Effective Mass mlh/m0 . . . 0.082 (Singh 1993) . . . Heavy Hole Effective Mass mhh/m0 . . . 0.45 (Singh 1993) . . . Hole Density of States Mass mdos/m0 0.60 (Singh 1993) . . . 0.40 (Singh 1993) Hole Hall Mobility at 300 K for p=1x1014 cm-3 . . . . ca. 400 cm2/V.s . . . . Hole Hall Mobility at 77 K for p=. . . cm-3 . . . ca. 7000 cm2/V.s . . . . Property \ Material . GaP . GaAs . GaSb Return to "SEMICONDUCTORS INFORMATION" Home Page Return to Top of this Page Property \ Material . InP . InAs . InSb . Structure Zinc Blende Zinc Blende Zinc Blende Space Group F bar4 3m F bar4 3m F bar 3m Lattice Parameter a0 at 300K 0.586 nm 0.605 nm 0.647 nm Nearest Neighbour Distance at 300K 0.254 nm 0.262 nm 0.280 nm Density at 300K 4.81 g.cm-3 5.69 g.cm-3 5.80 g.cm-3 Elastic Modulus c11 at 300 K . . . . . . . . . . . . Linear Expansion Coeff. at 300 K . . . . . . . K-1 . . . . LO Phonon Energy . . . . . . cm-1 . . . TO Phonon Energy . . . . . . cm-1 . . . Thermal Conductivity at 300 K . . . . . . W.cm-1K-1 . . . Melting Point . . . . . .. K . . . Dielectric Constant (f=0 to f=RF) 12.4 14.6 17.7 Nature of Energy Gap Eg Direct Direct Direct Energy Gap Eg at 300 K 1.344 eV 0.36 eV 0.17 eV Energy Gap Eg at ca. 0 K 1.424 eV (at 1.6 K) 0.418 eV (at 4.2 K) 0.237 eV (at 2 K) Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . . Ionisation Energy of Silicon Donor . . . . . . . meV . . . . . Electron Effective Mass / m0 0.073 (Singh 1993) 0.027 (Singh 1993) 0.013 (Sze 1969) Electron Hall Mobility at 300 K for n = . . . . . . . .cm2/V.s . . . . Electron Hall Mobility at 77 K for n = . . . . . . . . . cm2/V.s . . . . Ionisation Energy of Zinc Acceptor . . . . . . . meV . . . . . Light Hole Effective Mass mlh/m0 . . . . . . . . . Heavy Hole Effective Mass mhh/m0 . . . . . . . . . Hole Density of States Mass mdos/m0 0.64 (Singh 1993) 0.4 (Singh 1993) 0.4 (Singh 1993) Hole Hall Mobility at 300 K for p = . . . cm-3 . . . . . . cm2/V.s . . . . Hole Hall Mobility at 77 K for p = . . . cm-3 . . . . . . . cm2/V.s . . . . . Property \ Material . InP . InAs . InSb

Additional information will be included.

Semiconductor Research Laboratories

Forthcoming Semiconductor Conferences

Properties of Di, Si, Ge

Properties of II-VI Compounds

Properties of III-Nitrides

Semiconductor Publications (Books, Conf Proc, Journals)

Fundamental Constants

European & American Physics & Materials Societies

INDIVIDUAL REFERENCES :
Harrison W A, 1980, "Electronic Structure and Properties of Solids" (Freeman)
Singh J, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill)

INFORMATION SOURCES FOR OTHER DATA :
O Madelung (Ed.), 1991, "Data in Science and Technology : Semiconductors" (Springer-Verlag)
S M Sze, 1969, "Physics of Semiconductor Devices" (Wiley)
S M Sze, 1985, "Semiconductor Devices - Physics and Technology" (Wiley)
J Singh, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill)

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