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DIFFUSION IN SEMICONDUCTORS INCLUDING IN SILICON Thernal Activation Energie, Prefactors and Temperatures for the Diffusion of Many Elements in Important Semicomductors

PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON

and
comparison with the properties of diamond and germanium


The information sources cited in the table below are listed at the bottom of the page.

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PROPERTY \ MATERIAL . DIAMOND . SILICON . GERMANIUM . Structure (All Cubic) Diamond Diamond Diamond Space Group Fd3m Fd3m Fd3m Lattice Parameter a0 at 300K 0.35668 nm 0.54311 nm 0.565791 nm Ekins-Daukes, 2001 Madelung, 1991 Takamoto et al, 2000 Nearest-Neighbour Bonds: Directions and Angle Between <111>, 109o 28min <111>, 109o 28min <111>, 109o 28min Nearest Neighbour Distance at 300K 0.15445 nm 0.235 nm 0.245 nm Density at 300K 3.51525 g.cm-3 2.3290 g.cm-3 5.3234 g.cm-3 Atomic Concentration at 300K 1.763x1023 cm-3 5.00x1022 cm-3 4.42x1022 cm-3 Elastic Moduli at approx 295K c11 = 1.0764 x 1012 Nm-2 c12 = 0.125 x 1012 Nm-2 c44 = 0.577 x 1012 Nm-2 (Grimsditch & Ramdas, 1975) . . . . . . Linear Expansion Coeff. at 300 K 1.05x10-6 K-1 2.6x10-6 K-1 5.8x10-6 K-1 (Singh 1993) LO Phonon Energy . . . 63.0 meV (Singh 1993) 37.0 meV (Singh 1993) TO Phonon Energy . . . . . . . . . Thermal Conductivity at 300 K ca. 25 W.cm-1.K-1 1.48 W.cm-1K-1 . . . Melting Point 3773 K 1683 K 1210 K Refractive Index at 546.1 nm 2.424 . . . . . . Dielectric Constant at 300 K 5.70 (at 1-10kHz) 11.9 16.0 Nature of Energy Gap Eg Indirect Indirect Indirect Energy Gap Eg at 300 K 5.47 eV (Koizumi, 2003) 1.1242 eV (Green 1990) 0.66 eV Energy Gap Eg at ca. 0 K . . . 1.1700 eV at 4.2K (Green 1990) . . . Effective Conc. Nc of CB states at 4.2K at 300 K . . .     4.55x1016 cm-3 2.86x1019 cm-3 (Green 1990) . . . Effective Conc. Nv of VB states at 4.2K at 300 K . . .     1.87x1016 cm-3 3.10x1019 cm-3 (Green 1990) . . . Intrinsic Carrier Conc. ni at 300 K . . . 1.07x1010 cm-3 (Green 1990) . . . PROPERTY \ MATERIAL DIAMOND SILICON GERMANIUM Ionisation Energy of Nitrogen as Donor 1.7 eV     Ionisation Energy of Phosphorus as Donor 0.59 eV (Koizumi et al, 1997, 1998, 2003) 45 meV 12 meV Ionisation Energy of Arsenic as Donor 0.41 eV (Barjon et al, 2014) 45 meV 12 meV Electron Longit. Effective Mass ml / m0 . . . 0.9163 at low T (Hensel et al 1965) (Green 1990) 1.64 Electron Transv. Effective Mass mtr / m0 . . . 0.1905 at low T (Hensel et al 1965) (Green 1990) 0.082 Electron Density-of-States Effective Mass m*dc / m0 at 4.2K at 300K . . .       1.06 1.09 (Green 1990) . . . Electron Thermal-Velocity Effective Mass m*tc / m0 at 4.2K at 300K . . .       0.27 0.28 (Green 1990) . . . Electron Hall Mobility at 300 K ca. 2800 cm2.V-1.s-1 1600 cm2.V-1.s-1 for n = 1.0x1014 cm-3 (Sze 1985, p. 33) 3900 cm2.V-1.s-1 for n = 1.0x1015 cm-3 (Singh 1993) Electron Hall Mobility at 77 K . . . Larger than 20000 cm2.V-1.s-1 for n = 1.0x1014 cm-3 (Sze 1985, p. 33) . . . Ionisation Energy of Boron as Acceptor 0.37 eV 45 meV 10 meV Light Hole Effective Mass mlh/m0 . . . 0.16 (Singh 1993) 0.044 (Singh 1993) Heavy Hole Effective Mass mhh/m0 . . . 0.49 (Singh 1993) 0.28 (Singh 1993) Hole Density-of-States Effective Mass m*dv / m0 at 4.2K at 300K . . .       0.59 1.15 (Green 1990) . . . Hole Thermal-Velocity Effective Mass m*tv / m0 at 4.2K at 300K . . .       0.37 0.41 (Green 1990) . . . Hole Mobility at 300 K 130 to 2010 cm2.V-1.s-1 430 cm2.V-1.s-1 for p = 1.0x1014 cm-3 1900 cm2.V-1.s-1 for n = 1.0x1015 cm-3 (Singh 1993) Hole Mobility at 77 K . . . . . . . . . PROPERTY \ MATERIAL DIAMOND SILICON GERMANIUM

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INFORMATION SOURCES : Davies G (Ed.), "Properties and Growth of Diamond" (IEE/INSPEC, 1994) Mayer J W and Lau S S, . . . "Electronic Materials Science for Integrated Circuits in Si and GaAs" . . . (MacMillan, 1990) Madelung O (Ed.), "Semiconductors: Group IV Elements and III-V Compounds" . . . (Data in Science and Technology: Springer-Verlag, 1991) Singh J, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill, 1993) Sze S M, "Semiconductor Devices - Physics and Technology" (Wiley, 1985)

INDIVIDUAL REFERENCES Barjon J, Jomard F & Morata S, Phys Rev B 89 (2014) 045201 Green M A, 1990, J. Appl. Phys. 67 2944 (contains data also for other temperatures) Grimsditch M H & Ramdas A K, Phys. Rev. B 11 (1975) 3139 Ekins-Daukes N J (Imperial College, London, UK), 2001, Personal Communication Hensel J C, Hasegawa H & Nakayama M, 1965, Phys. Rev. 138 A225 Koizumi S, Kamo M, Sato Y, Ozaki H & Inuzuka T, 1997, Appl. Phys. Lett. 71 1065 Koizumi S, Kamo M, Sato Y, Mita S, Sawabe A, Reznik A, Uzan-Saguy C & Kalish R, 1998,       Diamond Relat. Mater. 7 540 Koizumi S, 2003, Invited Review presented at the Conference entitled       "The Physics of Group IV Semiconductors", University of Exeter, UK, 07-10 April 2003 Singh J, 1993 "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill) Takamoto T, Agui T, Ikeda E and Kurita H, 2001, Solar Energy Materials & Solar Cells 66 511

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