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ARMENIA
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Yerevan State University: Dept of Physics of Semiconductors and Microelectronics
photo-electrochemical & thermo-photovoltaic properties, luminesc, epitaxy for III-Vs, LD & QD structures, nanotechnology
BELARUS
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Minsk: Belarus State Univ. of Informatics & Radioelectronics
. . semicond silicides, nanotechnology, porous Si for LEDs
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Minsk: Inst. of Electronics
. . micro- & opto-electronics, nanostruct, lasers, quant.electronics
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Minsk: Inst. of Physics
. . III-Vs, quantum optics, semic. lasers, semic. optics
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Minsk: Inst. of Solid State & Semic. Phys
. . Si, III-Vs, III-Ns, II-VIs, IV-VIs, MOVPE, opt. props, defects
. . . Minsk: Inst. of Molecular & Atomic Physics
. . relaxation processes in nano-structures
CROATIA
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Zagreb, Rudjer Boškovic Inst.
high-resist. semicond, TSC, deep-levels, DLTS, GaAs, GaN, InP, CdS, CdTe,
a-Si, a-Ge, solar cells
ICELAND
. . . University of Iceland in Reykjavik . . Si, GaN, MOCVD, defects,
NORWAY: Universities and Polytechnics
. . . Oslo, Dept of Physics . . SiC (ion impl, doping)
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RUSSIA
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Chernogolovka, Inst of Solid State Physics
. . deformation, dislocations, fullerenes
. . . Chernogolovka, Inst of Micro-electronics Technol
. . Si, defects, hydrogen complexes, DLTS
. . . Dubna: Joint Inst of Nucl. Research . . polarons, quantum wells
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Moscow, Lebedev Physical Research Inst.
. . PL, DLTS, ion-implant., Si, GaAs, Di, rare-earth-doping
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Moscow State Institute of Electronic Technology
VLSI (MOS & Bipolar), GaAs,
nanostructures & nanoelectronics, simulation of devices & processes
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Moscow State University Physics Dept
amorphous, disordered & anisotropic semiconductors; EXAFS;
optical props & optoelectronics.
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Nizhny Novgorod, Inst. for Phys. of Microstructures
. . IR abs, PL, EL, DLTS, TEM, MBE, Er-doped Si, SiGe
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Nizhni Novgorod State University: Faculty of Appl Phys & Microelectronics
a-Si, GaAs, diffusion, silicides, thin films,
quantum-dimensional heterostructures
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Novosibirsk State University, Physics Dept
. . surfaces & interfaces, MOS, nanostructures, nanoelectronics
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Saratov State Univ, Physics Dept (Info in English)
hot electrons, Gunn, Schottky, silicides, CdS,
VHF devices, nano- & opto- electronics.
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St Petersburg Electrotechnical University (Index in English)
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St Petersburg Electrotechnical University, Faculty of Electronics
MOS, SiC, heterostructures, optoelectronics,
Schottky, nanostructures and nanoelectronics
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St Petersburg, Ioffe Physico-Technic Inst
. . PL, electric props, defects, i-r emission, growth, irrad, GaN, Ge,
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St Petersburg State Univ. Faculty of Physics
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St Petersburg State Univ. Institute of Physics
surfaces & interfaces, heterostructures, ultrasoft X-ray spectroscopy
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Taganrog State Univ of Radio Engineering
. . Si IC - simulation and technology, thin films, VLF devices
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Voronezh State University . . . VHF device modelling, porous Si,
silicides, sensors, IC technology, plasma processing
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Yaroslavl State Univ.. . porous Si, chalcogenides, thin films
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Yekaterinburg: High Pressure Group, Institute of Metal Physics of the Russian Academy of Sciences
. . high pressure studies of semiconductors: transport, optical, mechanical & other properties
SWITZERLAND
. . . Basel . . semiconducting fullerenes, carbon nano-tubes
. . . Bern
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Lausanne, Polytechnic of, Inst. of Micro- & Opto- Electronics
. . HVPE growth of GaN
TURKEY
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Bilkent University
. . . Superlattice photodetectors, IR detection, quantum cascade lasers, surface plasmonics, quantum confinement in nanocrystals
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Istanbul Technical Univ
. . . Modelling, synthesis & characterization of semiconductor & nanomaterial devices
UKRAINE
. . . Kiev: Institute of Physics
. . electronic props, nano-composite films
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Kiev State University, Faculty of Radiophysics
. . surfaces, interfaces, Schottkies, nanostructures,
optoelectronics
. . . Lviv State University
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