ARMENIA
. . .
Yerevan State University: Dept of Physics of Semiconductors and Microelectronics
thermo-electric, photo-electrochemical & thermo-photovoltaic properties, luminesc, l-p epitaxy for III-Vs, LD & QD structures,
porous semic, nanotechnology
BELARUS
. . .
Minsk: Belarus State Univ. of Informatics & Radioelectronics
. . semicond silicides, nanotechnology, porous Si for LEDs
. . .
Minsk: Inst. of Electronics
. . micro- & opto-electronics, nanostruct, lasers, quant.electronics
. . .
Minsk: Inst. of Physics
. . III-Vs, quantum optics, semic. lasers, semic. optics
. . .
Minsk: Inst. of Solid State & Semic. Phys
. . Si, III-Vs, III-Ns, II-VIs, IV-VIs, MOVPE, opt. props, defects
. . . Minsk: Inst. of Molecular & Atomic Physics
. . relaxation processes in nano-structures
CROATIA
. . .
Zagreb, Rudjer Bokovic Inst.
high-resist. semicond, TSC, deep-levels, DLTS, GaAs, GaN, InP, CdS, CdTe,
a-Si, a-Ge, solar cells
ICELAND
. . . University of Iceland in Reykjavik . . Si, GaN, MOCVD, defects,
NORWAY: Universities and Polytechnics
. . . Oslo, Dept of Physics . . SiC (ion impl, doping)
. . .
RUSSIA
. . .
Chernogolovka, Inst of Solid State Physics
. . deformation, dislocations, fullerenes
. . . Chernogolovka, Inst of Micro-electronics Technol
. . Si, defects, hydrogen complexes, DLTS
. . . Dubna: Joint Inst of Nucl. Research . . polarons, quantum wells
. . .
Moscow, Lebedev Physical Research Inst.
. . PL, DLTS, ion-implant., Si, GaAs, Di, rare-earth-doping
. . .
Moscow State Institute of Electronic Technology
VLSI (MOS & Bipolar), GaAs,
nanostructures & nanoelectronics, simulation of devices & processes
. . .
Moscow State University Physics Dept
amorphous, disordered & anisotropic semiconductors; EXAFS;
optical props & optoelectronics.
. . .
Nizhny Novgorod, Inst. for Phys. of Microstructures
. . IR abs, PL, EL, DLTS, TEM, MBE, Er-doped Si, SiGe
. . .
Nizhni Novgorod State University: Faculty of Appl Phys & Microelectronics
a-Si, GaAs, diffusion, silicides, thin films,
quantum-dimensional heterostructures
. . .
Novosibirsk State University, Physics Dept
. . surfaces & interfaces, MOS, nanostructures, nanoelectronics
. . .
Saratov State Univ, Physics Dept (Info in English)
hot electrons, Gunn, Schottky, silicides, CdS,
VHF devices, nano- & opto- electronics.
. . .
St Petersburg Electrotechnical University (Index in English)
. . .
St Petersburg Electrotechnical University, Faculty of Electronics
MOS, SiC, heterostructures, optoelectronics,
Schottky, nanostructures and nanoelectronics
. . .
St Petersburg, Ioffe Physico-Technic Inst
. . PL, electric props, defects, i-r emission, growth, irrad, GaN, Ge,
. . . St Petersburg State Univ.
Faculty of Physics . . . St Petersburg State Univ.
Institute of Physics
surfaces & interfaces, heterostructures,
ultrasoft X-ray spectroscopy
. . .
Taganrog State Univ of Radio Engineering
. . Si IC - simulation and technology, thin films, VLF devices
. . .
Voronezh State University . . . VHF device modelling, porous Si,
silicides, sensors, IC technology, plasma processing
. . .
Yaroslavl State Univ.. . porous Si, chalcogenides, thin films
. . .
Yekaterinburg: High Pressure Group, Institute of Metal Physics of the Russian Academy of Sciences
. . high pressure studies of semiconductors: transport, optical, mechanical & other properties
SWITZERLAND
. . . Basel . . semiconducting fullerenes, carbon nano-tubes
. . . Bern
. . .
Lausanne, Polytechnic of, Inst. of Micro- & Opto- Electronics
. . HVPE growth of GaN
TURKEY
. . .
Ankara University
. . . CuO, Ge, a-Si, electrical & optical characterisation
. . . Istanbul Technical Univ
. . HBT & MODFET modelling, tight-binding calcs incl. of III-Ns,
opto-electronic ICs, VLSI
UKRAINE
. . . Kiev: Institute of Physics
. . electronic props, nano-composite films
. . .
Kiev State University, Faculty of Radiophysics
. . surfaces, interfaces, Schottkies, nanostructures,
optoelectronics
. . . Lviv State University
Please click here to suggest additional laboratories that should be included
|
|
LINKS
|
|
