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Europe In the European Union: A to J |
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or click on my e-mail address below to write to me directly. d.w.palmer@semiconductors.co.uk LATVIA: Universities . . . University of Latvia in Riga: Inst of Solid State Phys . . AlN, PL, LITHUANIA: Universities & Institutes . . . Vilnius, Lithuanian Acad. of Science, Instit. of Semicond. Phys. heterostructures, contacts, hot electrons, noise, Ge, Si, GaAs, InSb etc . . . Vilnius, Univ. of . . surface acoustic waves, GaN LUXEMBOURG . . . MALTA . . . POLAND: Universities & Institutes . . . Warsaw, Inst. of Electron Technol. . . micro- & opto-electronics, ICs, LDS, III-V processing, defects, photo-detectors . . . Warsaw, Inst. of Electronic Materials Technol. . . semiconductor materials, crystals, epi-layers, masks, ceramics . . . Warsaw, Inst. of Physics, Acad. Sciences . . II-VI, IV-VI, epilayers, defects, dislocations, DLTS, magneto-optical . . . Warsaw: Unipress High Pressure Res. Centre . . pressure effects, semicond. growth, lattice defects . . . Warsaw: Military Univ. of Technology . . photo-diodes, uv detectors, GaN, AlGaN, . . . Warsaw University, Solid State Phys. . . quant. wells, wires, dots; GaAs, InGaAs, GaN, AlGaN, opt. & magneto-opt . . . Warsaw University of Technol . . ternaries AIBIIICVI2, espec. CuInSe2; CdTe; solar cells, PL, Raman, EXAFS, XANES . . . Wroclaw: Univ. of Technology . . advanced optical spectrosc, photonics, low-D e & h devices, quantum information PORTUGAL: Universities . . . Aveiro: Dept of Physics . . PL, Raman, Si, GaN, lattice defects . . . Porto: Dept of Physics . . semiconductor materials, disorder effects, opto-electronics, integrated optics, sensors . . . Lisbon, Technical Univ . . amorphous Si, electrical & opt. properties, ESR, hydrogenation, . . . Minho RUMANIA . . . SLOVAKIA: Universities . . . Slovak Technical University, Bratislava, Dept of Microelectronics . . heterostructures, contacts, Schottkies . . . Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava . . . . . structural, optical, transport properties of semiconductor materials; Si CMOS for advanced processors; GaAs, InP and GaN quantum heterostructures SLOVENIA . . . SPAIN: Universities & Institutes . . . Barcelona . . SXPS, III-Ns, . . . Barcelona, Inst. of Material Science . . MBE-growth of nanostructures, optical charact. by Raman, SNOM etc . . . Cadiz . . TEM, HREM, MBE, III-Ns, . . . Madrid: UPM . . Plasma MBE, photo-diodes, growth of III-Ns, . . . Madrid, Autonomous University . . Epi-growth, GaAsN, GaInAsN, BCN, SiCN; PL, SEM, C-V, TSC, DLTS . . . Valencia, Semicond Group . . optical, structural & dielectric props of II-VI, III-V & III-VI semicond. under pressure . . . Vigo, New Materiala Group . . Laser processing for silicon-based materials, Si, SiGe, SiC, thin films, surfaces, nano-electronics, photovoltaics, MEMS, NEMS SWEDEN: Universities & Institutes . . . Chalmers Univ. of Technology, Gothenburg . . nano-electronics, MEMS, THz & microwave devices, full clean-room facilities . . . Linköping: Dept of Phys. . . PL, CL, AFM, TEM, HRXRD, HVPE growth, defects, Si, SiGe, III-Ns, GaNAs, . . . Luleå . . Dept of Mathematics: theoretical modelling of defects, . . . Lund . . Si, III-Vs, DLTS, PL, shallow donors in Si, . . . Stockholm / Kista, Royal Inst. Technol. . . Si, irradiation effects, oxygen complexes . . . Uppsala: General Dept of Phys . . materials & surface physics, MBE, ion-beam analysis Condensed-Matter Theory Group . . electronic structure theory THE NETHERLANDS: Universities & Institutes . . . Amsterdam, Van der Waals-Zeeman Inst . . Di, Si, defects, ESR, i-r absorpt, thermal donors in Si, . . . Nijmegan. . MOCVD incl at high pressure, GaN . . . Leiden . . . Twente, Univ: Mesa Research Inst. . . . Nanotechnology, microsystems, materials science & microelectronics . . . Utrecht, Univ of: Debye Institute, Ornstein Lab . . . . . . . . Quantum dots, luminescence; semic photo-electrochemistry incl of GaP; nanostructures. UNITED KINGDOM: Universities . . . Bath . . II-Vs, II-VIs, III-nitrides, luminescence, magneto-optic effects . . . Birmingham . . porous Si, luminescence . . . Bristol . . diamond, optical properties, electron microscopy, lattice defects . . . Brunel . . silicon devices, defect engineering Also: SIRE: sensor instrumentation and radiation effects . . . Cambridge . . General . . GaAs-AlGaAs, quantum transport, single-electron transport, low-dimensional systems Optoelectronics, incl. femtosec opt. spectros. and properties & devices of semicond polymers . . SiGe . . . De Montford . . GaN, electron relaxation theory . . . Durham . . GaAs, II-VIs, solar cells especially CdTe/CdS . . . Edinburgh . . III-Vs, II-VIs, structural studies . . . Essex . . electron-scattering theory, photodetectors . . . Exeter . . graphene & graphite, nanostructures, quantum transport, surfaces, lattice defects & impurities, thermal & optical properties, theory, experiment . . . . . . . . . . . .Centre for Graphene Science . experiment & theory; electronic, optical & mechanical devices; fabrication methods . . . Glasgow . . HEMTs, quantum dots, single-electron devices . . . Heriot-Watt, Edinburgh . . optical properties . . . Hull . . II-VIs, optical & electrical properties, MBE, . . . Imperial College, London General Electronic Materials & Devices . . semic growth & analysis, solid state theory, ph-voltaics, SiGe Experimental Solid State Physics . . . InAs/GaAs quantum dots, novel solar cells, photonics, SiGeC High Energy Physics . . . development of thick silicon detectors Photo-Voltaic Group . . . solar cells, III-Vs, quantum wells . . . King's College, London . . diamond, silicon, luminescence, lattice defects incl study by uniaxial-stress, theory of defects . . . Lancaster . . i-r LEDS & lasers, disordered systems, localisation . . . Leeds . . theory of quantum-cascade lasers . . . Leicester . . quantised electron transport, muon spin-resonance spectroscopy, surfaces, amorph. solids, ZnO, Hg0 . . . Liverpool . . III-Vs, surfaces . . . Loughborough . . . Manchester . . . . . . . . Centre for Mesoscience & Nanotechnology . . graphene & other 2D materials, nano-optics, Gecho tape, superconductivity, . . . Newcastle-Upon-Tyne . . lattice defect theory . . . North-East Wales Inst. of Higher Education . . Opto-electronics, II-VIs, MOVPE especially for ZnSe:N . . . Nottingham . . III-Vs incl. nitrides, tunnelling, luminescence, quantum dots . . . Oxford . . Si, a-Si, III-Vs, GaN, quantum-Hall effect, opt. absorp. & luminescence . . . Queens Univ, Belfast, Northern Ireland NISRC - the Northern Ireland Semiconductor Research Centre . . ICs, SOI, device simulation, MEMS, nanotechnology The Semiconductors & Nanotechnology Laboratories Subway . . . Royal Holloway, Univ of London . . III-Vs, nanostructures, electronic & thermal properties . . . Salford . . Materials research incl. for photo-voltaics, photonic-band gaps, ion implantation . . . Sheffield . . III-Vs, luminescence, opto-electronics, quantum dots, LEDs, epi-growth . . . Sheffield Hallam Photo-Voltaics & Displays . . solar cells, CdTe, CIGS, organics, LEDs, large-area luminescence Lattice Defects . . European Framework-6 Project on defects in semiconductors . . . Southampton . . Si, a-Si, transport / MOS devices, micro- and nano-fabrication, solar cells . . . South Bank, London . . thin-film c-Si solar cells . . . St Andrews General Lasers & Their Applications . . microchip lasers, opt. parametric oscill, non-linear optics Photonic Materials & Devices . . MQWs, resonant electron tunnelling, optical switching devices . . . Strathclyde . . III-nitrides & other III-Vs, band-gap studies, PL, semicond. optical amplifiers . . . Surrey . . PL, luminescence, QW-lasers, pressure & strain effects, III-Vs, III-Ns, semic silicides . . . Sussex . . theory of structures & lattice defects . . . UMIST: Centre for Electronic Materials, Manchester . . luminescence, lattice defects, DLTS, TEM & EELS, STM . . . University College, London . . III-Vs including InP, Si/SiGe, MQWs, photonics, electron transport, 2DEGs . . . Wales/Aberystwyth . . electronic props of organic semiconductors . . . Wales/Bangor . . multi-mode lasers . . . Wales/Cardiff . . II-VIs, Si, luminescence, lasers . . . Warwick . . surfaces, interfaces, thin films of narrow-gap III-Vs, incl. InN, GaInN, InNAs, GaNSb & new spintronic materials UNITED KINGDOM: Commercial Laboratories . . . CIP: Centre for Integrated Photonics (Martlesham Heath, Ipswich), including collaboration with academia . . . . . . . advanced photonic components & services for communications, life-sciences, industry and defence UNITED KINGDOM: Government Laboratories . . . DERA (Malvern) . . Si, SiC, III-Vs incl. III-Nitrides, MOCVD, high-power/high-temperature devices and circuitry |
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