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SEMICONDUCTOR RESEARCH LABORATORIES
WITHIN THE EUROPEAN UNION
COUNTRIES A to J
Many
Africa Asia and Australasia North, Central and South America

Europe In the European Union: K to Z
 
Europe Outside the European Union


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AUSTRIA
. . . Graz, Technical Univ . . defects, positron annihilation,
. . . Linz, J. Kepler Univ . . defects, multilayers, EPR, electr & optic, luminesc, Si(Er), SiC, organic semicond.
. . . Vienna, Technical Univ.
      . . . . Inst. for Micro-Electronics . . VLSI fabric, MOSFETS, amorph semic,
      . . . . Inst. for Electron Microscopy. . HREM etc
. . . Vienna, Univ. of Technology.
      . . . . Inst. for Solid State Electronics . . MBE, Si technol., nanostructures, THz electronics, process simulation



BELGIUM
. . . Antwerp . . MOVPE, electr props, GaN
. . . Brussels . .
. . . Gent . . SiGe, III-Ns, epitax growth (MOCVD) & properties
. . . KU Leuven: Solid State Phys . . pulsed magnet. studies: low dimens. struct, quant islands, PL, far-IR
. . . Leuven, IMEC . . defects, irrad damage, RBS, Si, SiGe
. . . Liege . .
. . . Mons . .



BULGARIA
. . . Sophia, Bulgarian Acad. of Science, Inst of Solid State Phys., Laboratory of Semicond. Heterostructures
          heterostructures, Si, GaAs, Schottkies, defects, DLTS, I-V, C-V



CYPRUS
. . .



CZECH REPUBLIC
. . .



DENMARK
. . . Copenhagen, Niels Bohr Institute . . nano-phys., MBE, E-B lith, mesoscopic transport, surfaces, interfaces
. . . Aarhus . . Ge, SiGe, defects, DLTS, irradiation & implantation, diffusion



ESTONIA
. . .



FINLAND
. . . Helsinki University of Technology . . positron-annihil. studies of lattice defects, Si, GaAs, GaN, defect theory.

. . . Helsinki University: Physical Sciences
                                                            . . amorph diamond coatings for medical & industr. applications
                                                            . . accelerator-based studies of semiconductors; semicond. detectors



FRANCE: Universities & Polytechnics
. . . Avignon . . exciton dynamics, III-Vs, III-Ns
. . . Clermont Ferrand: Blaise Pascal . . Surface / interface sci., AES, EELS, InP, GaN, porous Si, MIS, Schottky
. . . Grenoble, Univ. J.-Fourier, Lab: Spectrom. Phys. . . II-VIs, III-Ns, porous Si, MBE, nano-struct, magnetics
. . . Lille: Institut d'Electronique de Microélectronique du Nord . . III-Vs, microwave devices, Si circuitry, telecoms.
. . . Lyon, INSA, Material Phys. . . PL, DLTS, ph-volt, het-struct, micro-optoelectr, Si, III-V, SiGe, cub-GaN,
. . . Marseille, CRMC2 . . SiGe quantum dots
. . . Montpellier, Univ.2 of . . SiC, III-Ns, epi-growth, PL, IR reflectivity, electrical props, MQWs
. . . Nice-Sophia Antipolis . . applied hetero-epitaxy
. . . Paris, Ecole Normale Supérieure . . semiconductor nano-structures, strain effects, III-N
. . . Paris, Univ. Denis Diderot . . phonon spectroscopy, Ge
. . . Paris, Univ. Pierre & Marie Curie . . GaN
. . . Picardie
. . . Poitiers
                    General . . Si, III-Vs, SiC, II-VIs, hardness, nano-indentation, TEM, AFM, electr. props, irradiation
                    Laboratoire de Physique des Matériaux (PHYMAT) . . thin films, nanostructures, plasticity, point & extended defects, theory
. . . InESS Strasbourg, CNRS, Strasbourg . . Photovoltaics, silicon technologies, ion implantation, integrated sensors
. . . Toulouse: Paul Sabatier . . large Eg, III-N, low dimens-. & nano -structs, thin films, electr & opt. props


FRANCE: Government Laboratories
. . . Bellevue, CNRS: Lab. Phys. Solids / Crystals
. . . Grenoble, CEA, Dept: Fundamental Research on Condensed Matter . . MBE, hex & cubic III-Ns, II-VIs, Si
. . . Grenoble, CNRS Institute of Micro-electronics, Electromagnetism & Photonics
                        . . Nano-electronics, Si, C, SoI, SiGe, MOSFETS, noise
. . . Caen, CNRS: ISMRA / LERMAT . . semiconductor nanostructures
. . . INES (Insitute National de l' Énergie Solaire), Le Bourget du Lac, Savoie . . solar energy research, photo-voltaics, silicon solar cells, thermal systems, applications
. . . Saclay, CEA: Service de Physique de l'Etat Condensé . . nano-technology, new materials for energy applications, semiconductor radiation detectors
. . . Valbonne, CHREA / CNRS . . Epitaxy, III-Vs, III-Ns, ZnO, SiC, electr/opt, quant.dots, UV detectors, theory



GERMANY
. . . Berlin . . GaInP/GaAs & AlGaAs/GaAs HBTs, AlGaN/GaN HFETs for high T, novel plasma-etching
. . . Berlin: Fritz-Haber-Institut . . surfaces, GaN
. . . Berlin: Max-Born-Institut . .
. . . Berlin: Paul-Drude-Institut . . Low dimensional semic, III-Ns, HREM, Q-C lasers, semic/ferromagn systems
. . . Berlin, Technical Univ, Inst of Solid State Physics . . Si, DLTS, hydrogen complexes
. . . Bielefeld . . MOCVD, appl. laser physics, theory, III-Ns
. . . Braunshweig, . . optical props, QWs, lasers, III-Ns
. . . Bremen . . HRXD, Raman, dislocations, III-Ns
. . . Dresden . . modelling of opt. props incl. of III-Ns
. . . Erlangen-Nürnberg: Inst of Technical Physics
. . . Frankfurt, Inst for Semic. Phys . . Ge, stimul i-r emission, SiGe, QWs
. . . Freiburg, Inst of Cryst . . SiGe, optical properties
. . . Garching, Walter Schottky Institut . . . doping of diamond,
. . . Giessen: Phys. Inst.I . . Auger, ESCA, UV-IR absorp, PL, electr, EPR, ODMR, epitaxy, III_Vs, III-Ns, II-VIs
. . . Hahn-Meitner-Institut, Berlin . . DLTS, PAC, Ge,
. . . Hameln/Emmerthal: Institute for Solar Energy Research (an Assoc. Institute of Leibnitz Univ.)
      . . . R & D in solar energy utilisation: materials, photovoltaics, thermal energy conversion
. . . Humboldt Univ, Berlin . . DLTS, PAC, Ge,
. . . Ilmenau . . optical props, reflectance spectroscopy, III-Ns
. . . Jena: Friedrich-Schiller . . General
                                            . . Inst. Festkörpertheorie und Theoretische Optik
                                            . . Physik
. . . Kassel . . micro and nano structures, STM
. . . Konstanz . . Mossbauer spectrosc, Si, GaN, rare-earth impurities
. . . Magdeburg: Otto-von-Guericke . . PL, EL, scanning EL, LEDs, III-Ns
. . . Max-Planck-Institut, Stuttgart . . hydrogen in Si, Raman spectros.
. . . München: Technical . . General
                                        . . Walter Schottkty Institute . . PL, MBE, plasma-MBE, III-Ns,
. . . Paderborn . . cubic III-N, MBE, theor. modelling of defects
. . . Regensburg . . . Physics Dept Research including Semiconductors
                         . . . Terahertz Excitation Centre . . intense excitation of semicond, spin currents, spin & energy relaxation,
. . . Stuttgart . . Si, Ge, III-N heterostruct, pyro-electric props, excitonic thermalis, phonons, defects
. . . Wurzburg . . thermo-electric properties, quantum dots
. . . Ulm . . GaN, ion etching, AlN/GaN FETs, quantum computing




GREECE
. . . Athens . . III-Vs (SI & 2DEG devices), III-Ns, SOI, opto-electr, radiation effects & detectors, sensors
. . . Athens: NCSR "Demokritos" . . electro-luminescence, QWs
. . . Crete . . MBE, cubic-GaN
. . . Ioannina . .
. . . Thessaloniki (Aristotle Univ) . . nanomaterials, quantum dots, thin films, electrical measurement & characterisation, experiment, theory



HUNGARY
. . . Budapest, Hungarian Acad. of Science, Inst. of Solid State Phys. and Optics (MFA)
          interfaces, contacts, Schottkies, DLTS, simulation, electronic transport
. . . Budapest Univ of Technol & Economics, Dept of Atomic Phys
. . . Budapest University, Res. Inst. for Techn. Phys & Materials Sci. . . MBE, GaN



IRELAND, Republic of
. . . Cork . . opto-electronics, photonics
. . . Dublin . . Semic. Spectros. Laborat: impurity & defects in Si, opto-electronics, quant. dots in Si & III-Vs incl. GaN
. . . Limerick . . Micro-electronics / Semicond. Res. Centre:   thin & thick film technol., sensors, mask-fabrication software
. . . National Univ of Ireland at Maynooth . . theor. physics of semicond. incl. quantum localisation transport & chaos



ITALY: Universities & Polytechnics
. . . Bologna . . lattice defects, III-nitrides
. . . Cagliari (Sardinia) . . condensed-matter theory, especially of spont. & pz polarisation in III-Ns
. . . Florence . . spin relaxation, InGaN/GaN MQWs
. . . Lecce, Semic. Technol. Lab. E-Mail . . III-Vs, II-Vs, nanostructures, MOVPE, VPE, CVD, PL, XRD, Hall
. . . Modena . . heterojunction properties, spont. polaris, GaN growth,
. . . Milan "Bicocca" . . molecular dynamics simulations incl of Ge dots on Si
. . . Monseratto (Cittadella Univ) . . MBE, III-Ns
. . . Padova (Padua), Phys.Dept . . SIMS, RBS, chann'g, PIXE, PL, DLTS, AFM, XRD, III-Vs, SiGe, LiNB03
. . . Pavia . . optical props, III-Ns
. . . Rome . . III-Vs, diamond, surfaces, nanowires
. . . Rome, La Sapienza . . opto-electronics, quantum dots, optical measurements
. . . Salerno

ITALY: Government Laboratories
. . . Trieste, TASC-INFM National Lab. . . III-Vs, III-Ns, II-VIs, MBE, magn-transp, XRD, ph-emiss, AFM, TEM, PL



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