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PROPERTIES OF THE II-VI COMPOUND SEMIC0NDUCTORS
Many
Author - d.w.palmer@semiconductors.co.uk

When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2008.03.


PLEASE SEE BELOW FOR PROPERTIES OF :
Zn0, ZnS, ZnSe, ZnTe         CdS, CdSe, CdTe         HgS, HgSe, HgTe

These semiconductor materials can crystallise in either the cubic zinc-blende (sphalerite) (beta) phase or the hexagonal wurzite (alpha) phase, but, for each material, one or other of those phases is thermodynamically more stable at 300K, as indicated.

Each measured property value at 300K, as given in the tables, is likely, unless otherwise stated, to be the value for the phase that is stable at 300K or for the phase that is the more easily produced.

The data for the lattice parameters are quoted from A R West "Basic Solid State Chemistry" (Wiley 1988), which states them to be from R W G Wykoff, "Crystal Structures" (Wiley 1971) Vol 1. The densities of the zinc-blende structures given in the tables below have been obtained by calculation using the respective lattice parameters from there.

Data shown without references are quoted from commercial or other documents where the original sources of the data are not stated.


To authors of research papers concerning II-VI semiconductors:
I shall be glad to receive copies of your papers that contain new or updated data
that could be included in the tables below.



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Property \ Material
.
ZnO
.
ZnS
.
ZnSe
.
ZnTe
.
Zinc Blende Lattice Parameter a0 at 300K . . . 0.541 nm 0.567 nm 0.610 nm
Zinc Blende Nearest-Neighbour Dist. at 300K . . . 0.234 nm 0.246 nm 0.264 nm
Zinc Blende Density at 300K . . . 4.11 g.cm-3 5.26 g.cm-3 5.65 g.cm-3
Wurzite Lattice Parameters at 300K
a0
c0
c0/a0
u
 
0.32495 nm
0.52069 nm
1.602
0.345
 
0.3811 nm
0.6234 nm
1.636
 
 
0.398 nm
0.653 nm
1.641
 
 
0.427 nm
0.699 nm
1.637
 
Wurzite Nearest Neighbour Dist. at 300K
calculated as 0.375c0 which would be correct
in ideal hexagonal structure of c0//a0=1.633
0.195 nm 0.234 nm 0.245 nm 0.262 nm
Wurzite Density at 300K 5.606 g.cm-3
Handbook of C & P,
53rd Editn, 1972
3.98 g.cm-3
Handbook of C & P,
53rd Editn, 1972
. . . . . .
Phase Stable at 300K wurzite
Smart & Moore 1995,
p.208
blende & wurzite
both occur in nature
blende blende
Melting Point 1975 oC
Handbook of C & P,
53rd Editn, 1972
1850 oC
(wurzite, 150 atm.)
1100 oC 1240 oC
Thermal Conductivity W.cm-1.oC-1 0.6 . . . 0.18 . . .
Specific Heat . . . . . . 0.356 J.g-1.oC-1 . ..
Linear Expansion Coefficient in oC-1
for zinc-blende structure
. . . ... 7.6x10-6 . . .
Linear Expansion Coefficient in oC-1
for wurzite structure
a0: 6.5x10-6
c0: 3.0x10-6
. . . . . . . . .
. Zn0 ZnS ZnSe ZnTe
Dielectric Const, low frequency

zinc-blende structure:

wurzite structure:

. . .

8.9

mean, 9.6
9.1
Singh 1993, p.840
7.4
Singh 1993, p.840
Refractive Index

zinc-blende structure:

wurzite structure:

 
 

 
 
 
2.008, 2.029
Handbook of C & P,
53rd Editn, 1972
 
2.368
Handbook of C & P,
53rd Editn, 1972

 
2.356, 2.378
Handbook of C & P,
53rd Editn, 1972
 
2.5
Singh 1993, p.840
 
2.72
Singh 1993, p.840
Energy Gap Eg at 300 K
zinc blende structure:
wurzite structure:
 
.
3.4 eV, Direct
 
3.68 eV, Direct
3.911 eV, Direct
 
2.8215 eV, Direct
.
 
2.394 eV, Direct
.
Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . cm-3 . . . cm-3
Ionisation Energies of Donors
Extensive Tabulation
. . . Desnica 1998 Desnica 1998 Desnica 1998
Ionisation Energy
of Aluminium Donor
(additional information: Desnica 1998)
. . . . . . 25.6 meV
Bhargava 1982
.
26 meV
Neumark 1988
18.3 meV
Pautrat etc 1985
.
18 meV
Allen 1995
Electron Effective Mass m*/m0 . . . . . . 0.21
Singh 1993, p. 840
0.2
Singh 1993, p. 840
Electron Hall Mobility at 300 K
for n=lowish
. . . 165 cm2/V.s 500 cm2/V.s
Singh 1993, p.840
340 cm2/V.s
Singh 1993, p.840
Ionisation Energies of Acceptors
Extensive Tabulation
. . . Desnica 1998 Desnica 1998 Desnica 1998
Ionisation Energy
of Phosphorus Acceptor
(additional information: Desnica 1998)
. . . . . . meV 85.3 meV
Neu et al 1998
63.5 meV
Bhargava 1982
Pautrat etc 1985
Hole Effective Mass m*dos/ m0 . . . . . . 0.6
Singh 1993, p.840
circa 0.2
Singh 1993, p.840
Hole Hall Mobility at 300 K for p=lowish . . . 5 cm2/V.s 30 cm2/V.s
Singh 1993, p. 840
100 cm2/V.s
Singh 1993, p. 840
. ZnO ZnS ZnSe ZnTe


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Property \ Material
CdS
.
CdSe
.
CdTe
.
Zinc Blende Lattice Parameter a0 at 300K 0.582 nm 0.608 nm 0.648 nm
Zinc Blende Nearest-Neighbour Dist. at 300K 0.252 nm 0.263 nm 0.281 nm
Zinc Blende Density at 300K 4.87 g.cm-3 5.655 g.cm-3 5.86 g.cm-3
Wurzite Lattice Parameters at 300K a0 = 0.4135 nm
c0 = 0.6749 nm
a0 = 0.430 nm
c0 = 0.702 nm
a0 =. . . nm
c0 =. . . nm
Wurzite Nearest-Neighbour Dist. at 300K . . . nm . . . nm . . . nm
Wurzite Density at 300K 4.82 g.cm-3 5.81 g.cm-3 . . . g.cm-3
Phase Stable at 300K Wurzite Wurzite Zinc Blende
Melting Point
Handbook of C & P,
53rd Editn, 1972
1750 oC
(wurzite, 100 atm.)
>1350 oC 1041 oC
(Zinc Blende)
Thermal Conductivity at 20oC ... ... 0.062 W.cm-1.oC-1
Specific Heat ... ... 0.21 J.g-1.oC-1
Linear Expansion Coefficient at 20oC ... ... 5.9x10-6 oC-1
. CdS CdSe CdTe
Dielectric Const, low frequency
zinc-blende structure:
wurzite structure: Singh 1993
.
.
.
.
10.2(pl), 9.3(pr)
.
10.2
.
.
Refractive Index

zinc-blende structure:

wurzite structure:

 
 

 
 
 
2.506, 2.529
Handbook of C & P,
53rd Editn, 1972
 
2.5
Singh 1993, p.840
 
2.72
Singh 1993, p.840
Energy Gap Eg at 300 K
zinc blende structure:
wurzite structure:


2.50 eV, Direct
2.50 eV, Direct
Singh 1993


.
1.714 eV, Direct
Shan et al 2004


1.474 eV, Direct
Singh 1993
.
Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . cm-3
Ionisation Energies of Donors
Extensive Tabulation
Desnica 1998 Desnica 1998 Desnica 1998
Ionisation Energy
of Aluminium Donor
(additional information: Desnica 1998)
. . . . . . 14.05 meV
Francou etc 1990
Electron Effective Mass mtr/m0 . . . . . . . . .
Electron Effective Mass ml/m0 . . . . . . . . .
Electron Hall Mobility at 300 K
for n=lowish
340 cm2/V.s . . . cm2/V.s 1050 cm2/V.s
Electron Hall Mobility at 77 K
for n= . .
. . . cm2/V.s . . . cm2/V.s . . . cm2/V.s
Ionisation Energies of Acceptors
Extensive Tabulation
Desnica 1998 Desnica 1998 Desnica 1998
Ionisation Energy
of Phosphorus Acceptor
(additional information: Desnica 1998)
. . . meV 83±6 meV
Henry etc 1971
68.2 meV
Pautrat etc 1985
.
50 meV
Stadler etc 1995
Hole Effective Mass / mo . . . . . . . . .
Hole Hall Mobility at 300 K for p=lowish 340 cm2/V.s . . . cm2/V.s 100 cm2/V.s
Hole Hall Mobility at 77 K for p=. . . cm-3 . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s
. CdS CdSe CdTe



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Property \ Material
.
HgS
.
HgSe
.
HgTe
.
Zinc Blende Lattice Parameter a0 at 300K 0.58517 nm 0.6085 nm 0.6453 nm
Zinc Blende Nearest-Neighbour Dist. at 300K 0.253 nm 0.264 nm 0.279 nm
Zinc Blende Density at 300K 7.72 g.cm-3 8.22 g.cm-3 8.12 g.cm-3
Wurzite Lattice Parameters at 300K a0=. . . nm
c0=. . . nm
a0=. . . nm
c0= . . . nm
a0=. . . nm
c0=. . . nm
Wurzite Nearest-Neighbour Dist. at 300K . . . nm . . . nm . . . nm
Wurzite Density at 300K . . . g.cm-3 . . . g.cm-3 . . . g.cm-3
Phase Stable at 300K . . . . . . . . .
Melting Point 583.5 oC
(zinc blende)
790 oC 670 oC
Thermal Conductivity ... ... ...
Specific Heat ... ... ...
Linear Expansion
Coefficient
... ... ...
. HgS HgSe HgTe
Dielectric Const, low frequency
zinc-blende structure:
wurzite structure:
.
.
.
.
.
.
Energy Gap Eg at 300 K
zinc blende structure:
wurzite structure:
. . . . . . . . .
Intrinsic Carrier Conc. at 300 K . . . cm-3 . . . cm-3 . . . cm-3
Ionisation Energy of . . . Donor . . . meV . . . meV . . . meV
Electron Effective Mass mtr / m0 . . . . . . . . .
Electron Effective Mass ml / m0 . . . . . . . . .
Electron Hall Mobility at 300 K
for n= . .
. . . cm2/V.s . . . cm2/V.s . . . cm2/V.s
Electron Hall Mobility at 77 K
for n= . .
. . . cm2/V.s . . . cm2/V.s . . . cm2/V.s
Ionisation Energy of . . . Acceptor . . . meV . . . meV . . . meV
Hole Effective Mass / mo . . . . . . . . .
Hole Hall Mobility at 300 K for p= . . .cm-3 . . . cm2/V.s . . cm2/V.s . . . cm2/V.s
Hole Hall Mobility at 77 K for p=. . . cm-3 . . . cm2/V.s . . . cm2/V.s . . . cm2/V.s
. HgS HgSe HgTe



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INDIVIDUAL REFERENCES :
Allen J W, 1995, Semicond. Sci. Technol. 10, 1049
Bhargava R N, 1982, J. Cryst. Growth 59, 15
Desnica U V, 1998, Prog. Crystal Growth and Charact. 36, 291-357
. . . . "Doping Limits in II-VI Compounds - Challenges, Problems and Solutions"
Francou J M, Saminadayer K and Pautrat J, 1990, Phys. Rev. B 41, 12035
Handbook of Chemistry & Physics, Edition 53 (CRC Press, 1972-1973)
Henry C H, Nassau K and Shiever J W, 1970, Phys. Rev. B 2, 545
Neumark G F, 1988, Phys. Rev. B 37, 4778
Neu G, Morhain C, Tournie E and Faurie JP, 1998, J. Cryst. Growth 184/185 515
Pautrat J, Francou J M, Magnea N, Molva E and Saminadayar K, 1985, J. Cryst. Growth 72, 194
Shan W, Walukiewicz W, Ager J W III, Yu K M, Wu J and Haller E E, 2004, Appl Phys Lett 84, 67
Singh J, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill)
Smart L and Moore E, 1995, "Solid State Chemistry", (Chapman & Hall: 2nd Edition)
Stadler W, Hoffman D M, Alt H C, Muschik T, Meyer B K, Weigel E, Müller-Wogt G, Salk M, Rupp E
. . and Benz K W, 1995, Phys. Rev. B 51, 10619

INFORMATION SOURCES FOR OTHER DATA :
O Madelung (Ed.), 1991, "Data in Science and Technology: Semiconductors" (Springer-Verlag)






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