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PROPERTIES OF THE III-V COMPOUND SEMIC0NDUCTORS
Many
Author - d.w.palmer@semiconductors.co.uk

When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2006.02.

PLEASE SEE BELOW FOR PROPERTIES OF :
      AlP, AlAs, AlSb       GaP, GaAs, GaSb       InP, InAs, InSb
The zinc-blende-structure densities stated in the tables below have been obtained by calculation using the lattice parameter values.

Energy-gap values for AlxGa1-xAs Energy-gap values for InxGa1-xAs
Properties of the III-Nitrides

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Property \ Material
.
AlP
.
AlAs
.
AlSb
.
Structure Zinc Blende Zinc Blende . . . .
Space Group F bar4 3m F bar4 3m F bar4 3m
Lattice Parameter a0 at 300K
quoted from Singh 1993
0.54635 nm 0.5660 nm 0.61355 nm
Nearest Neighbour Distance at 300K . . . 0.2454 nm 0.265 nm
Density at 300K . . . 3.717 g.cm-3 4.29 g.cm-3
Elastic Modulus c11 at 300 K . . . . 12.0x1011 dynes.cm-2 . . . .
Linear Expansion Coeff. at 300 K . . . . ca. 5x10-6 K-1 . . . .
LO Phonon Energy . . . 50.1 meV . . .
TO Phonon Energy . . . 44.9 meV . . .
Thermal Conductivity at 300 K . . . . . . Wcm-1K-1 . . .
Melting Point . . . 2013 K . . .
Dielectric Constant, Low/Lowish Frequency 9.8 10.06 12.04
Nature of Energy Gap Eg Indirect Indirect Indirect
Energy Gap Eg at 300 K 2.45 eV 2.153 eV 1.615 eV
Energy Gap Eg at ca. 0 K 2.505 eV (at 4 K) 2.229 eV (at 4 K) 1.686 eV (at 27 K)
Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . .
Ionisation Energy of Silicon Donor . . . . 70 meV . . . . .
Electron Effective Mass / m0 . . . 0.1
(Singh 1993)
0.12
(Singh 1993)
Electron Hall Mobility at 300 K
for n = . .
. . . . . . . cm2/V.s . . . .
Electron Hall Mobility at 77 K
for n = . . .
. . . . . . . cm2/V.s . . .
Ionisation Energy of Zinc Acceptor . . . . . . . meV . . .
Light Hole
Effective Mass mlh/m0
. . . . . . . . .
Heavy Hole
Effective Mass mhh/m0
. . . . . . . . .
Hole
Density of States Mass mdos/m0
. . . . . . 0.98
(Singh 1993)
Hole Hall Mobility at 300 K for p = . . . cm-3 . . . . . . . cm2/V.s . . .
Hole Hall Mobility at 77 K for p=. . . cm-3 . . . . . . . cm2/V.s . . . .
.
Property \ Material
.
AlP
.
AlAs
.
AlSb


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Property \ Material
.
GaP
.
GaAs
.
GaSb
.
Structure (All Cubic) Zinc Blende Zinc Blende Zinc Blende
Space Group F bar4 3m F bar4 3m F bar4 3m
Lattice Parameter a0 at 300K 0.5451 nm 0.5653 nm 0.609 nm
Nearest Neighbour Distance at 300K 0.2360 nm 0.2448 nm 0.264 nm
Density at 300K 4.129 g.cm-3 5.318 g.cm-3 5.63 g.cm-3
Bond Energy . . . 6.52 eV/atom
Harrison, 1980
. . .
Elastic Modulus c11 at 300 K . . . . 11.9x1011 dynes.cm-2 . . . . .
Linear Expansion Coeff. at 300 K . . . K-1 ca. 5.7x10-6 K-1 . . . K-1
LO Phonon Energy . . . 285.0 cm-1 . . .
TO Phonon Energy . . . 267.3 cm-1 . . .
Thermal Conductivity at 300 K . . . 0.5 Wcm-1K-1 . . .
Melting Point . . . 1513 K . . .
Dielectric Constant (f=0 to f=RF) 11.1 12.5 15.7
Nature of Energy Gap Eg Indirect Direct Direct
Energy Gap Eg at 300 K 2.272 eV 1.424 eV 0.75 eV
Energy Gap Eg at ca. 0 K 2.350 eV
(at 0 K)
1.5191 eV
(at 0 K)
0.8113 eV
(at 2 K)
Intrinsic Carrier Conc. at 300 K . . . 2.1x106 cm-3 . . . .
Ionisation Energy of Silicon Donor . . . . 5.8 meV . . . . .
Electron Effective Mass / m0 . . . 0.067
(Singh 1993)
0.042
(Singh 1993)
Electron Hall Mobility at 300 K
for n=1.3x1013 cm-3
. . . . 9200 cm2/V.s . . . .
Electron Hall Mobility at 77 K
for n=1.3x1013 cm-3
. . . . 2x105 cm2/V.s . . . .
Ionisation Energy of Zinc Acceptor . . . . 30.6 meV . . . . .
Light Hole
Effective Mass mlh/m0
. . . 0.082
(Singh 1993)
. . .
Heavy Hole
Effective Mass mhh/m0
. . . 0.45
(Singh 1993)
. . .
Hole
Density of States Mass mdos/m0
0.60
(Singh 1993)
. . . 0.40
(Singh 1993)
Hole Hall Mobility at 300 K for p=1x1014 cm-3 . . . . ca. 400 cm2/V.s . . . .
Hole Hall Mobility at 77 K for p=. . . cm-3 . . . ca. 7000 cm2/V.s . . .
.
Property \ Material
.
GaP
.
GaAs
.
GaSb


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Property \ Material
.
InP
.
InAs
.
InSb
.
Structure Zinc Blende Zinc Blende Zinc Blende
Space Group F bar4 3m F bar4 3m F bar 3m
Lattice Parameter a0 at 300K 0.586 nm 0.605 nm 0.647 nm
Nearest Neighbour Distance at 300K 0.254 nm 0.262 nm 0.280 nm
Density at 300K 4.81 g.cm-3 5.69 g.cm-3 5.80 g.cm-3
Elastic Modulus c11 at 300 K . . . . . . . . . . . .
Linear Expansion Coeff. at 300 K . . . . . . . K-1 . . . .
LO Phonon Energy . . . . . . cm-1 . . .
TO Phonon Energy . . . . . . cm-1 . . .
Thermal Conductivity at 300 K . . . . . . W.cm-1K-1 . . .
Melting Point . . . . . .. K . . .
Dielectric Constant (f=0 to f=RF) 12.4 14.6 17.7
Nature of Energy Gap Eg Direct Direct Direct
Energy Gap Eg at 300 K 1.344 eV 0.36 eV 0.17 eV
Energy Gap Eg at ca. 0 K 1.424 eV (at 1.6 K) 0.418 eV (at 4.2 K) 0.237 eV (at 2 K)
Intrinsic Carrier Conc. at 300 K . . . . . . cm-3 . . . .
Ionisation Energy of Silicon Donor . . . . . . . meV . . . . .
Electron Effective Mass / m0 0.073
(Singh 1993)
0.027
(Singh 1993)
0.013
(Sze 1969)
Electron Hall Mobility at 300 K
for n = . .
. . . . . .cm2/V.s . . . .
Electron Hall Mobility at 77 K
for n = . .
. . . . . . . cm2/V.s . . . .
Ionisation Energy of Zinc Acceptor . . . . . . . meV . . . . .
Light Hole
Effective Mass mlh/m0
. . . . . . . . .
Heavy Hole
Effective Mass mhh/m0
. . . . . . . . .
Hole
Density of States Mass mdos/m0
0.64
(Singh 1993)
0.4
(Singh 1993)
0.4
(Singh 1993)
Hole Hall Mobility at 300 K for p = . . . cm-3 . . . . . . cm2/V.s . . . .
Hole Hall Mobility at 77 K for p = . . . cm-3 . . . . . . . cm2/V.s . . . .
.
Property \ Material
.
InP
.
InAs
.
InSb



Additional information will be included.





INDIVIDUAL REFERENCES :
Harrison W A, 1980, "Electronic Structure and Properties of Solids" (Freeman)
Singh J, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill)

INFORMATION SOURCES FOR OTHER DATA :
O Madelung (Ed.), 1991, "Data in Science and Technology : Semiconductors" (Springer-Verlag)
S M Sze, 1969, "Physics of Semiconductor Devices" (Wiley)
S M Sze, 1985, "Semiconductor Devices - Physics and Technology" (Wiley)
J Singh, 1993, "Physics of Semiconductors and Their Heterostructures" (McGraw-Hill)





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