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ENERGY-GAP VALUES for InxGa1-xAs at 300K

When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2001
Many
Data Reference:   R E Nahory, M A Pollack, W D Johnson Jr and R L Barns, Appl. Phys. Lett. 33 (1978) 659

from which the data in the table below for the energy gap Eg for InxGa1-xAs at 300K,
for x between 0 and 1 have been calculated by use of the formula
Eg(x) = 1.425eV - 1.501eV*x + 0.436eVeV*x2
given in that paper as the best fit to the experimental data.
The energy gap is direct for all x values 0.000 to 1.000.




Indium
Content
x 		Energy Gap
Eg
eV 		Corresponding
Optical Wavelength
nm
0.0001.425870.2
0.0501.351917.8
0.1001.279969.3
0.1501.2101025
0.2001.1421086
***
0.2501.0771151
0.3001.0141223
0.3500.9531301
0.4000.8941386
0.4500.8381480
***
0.5000.7831583
0.5500.7311696
0.6000.6811820
0.6500.6341957
0.7000.5882109
***
0.7500.5442277
0.8000.5032464
0.8500.4642671
0.9000.4272902
0.9500.3933159
***
1.0000.3603444
***
0.5300.7521649
***
  The alloy having x
equal to 0.530
is lattice matched to InP.		  


I shall be glad to be informed of references to any appropriate Eg(InGaAs) data published after those of 1978 given above.
d.w.palmer@semiconductors.co.uk


 








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