ENERGY-GAP VALUES for InxGa1-xAs at 300K
When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2001
Data Reference: R E Nahory, M A Pollack, W D Johnson Jr and R L Barns,
Appl. Phys. Lett. 33 (1978) 659
from which the data in the table below for the energy gap Eg for
InxGa1-xAs at 300K,
for x between 0 and 1 have been calculated by use of the formula
Eg(x) = 1.425eV - 1.501eV*x + 0.436eVeV*x2
given in that paper as the best fit to the experimental data.
The energy gap is direct for all x values 0.000 to 1.000.
Indium
Content
x
|
Energy Gap
Eg
eV
|
Corresponding
Optical Wavelength
nm
|
| 0.000 | 1.425 | 870.2 |
|---|
| 0.050 | 1.351 | 917.8 |
|---|
| 0.100 | 1.279 | 969.3 |
|---|
| 0.150 | 1.210 | 1025 |
|---|
| 0.200 | 1.142 | 1086 |
|---|
| * | * | * |
|---|
| 0.250 | 1.077 | 1151 |
|---|
| 0.300 | 1.014 | 1223 |
|---|
| 0.350 | 0.953 | 1301 |
|---|
| 0.400 | 0.894 | 1386 |
|---|
| 0.450 | 0.838 | 1480 |
|---|
| * | * | * |
|---|
| 0.500 | 0.783 | 1583 |
|---|
| 0.550 | 0.731 | 1696 |
|---|
| 0.600 | 0.681 | 1820 |
|---|
| 0.650 | 0.634 | 1957 |
|---|
| 0.700 | 0.588 | 2109 |
|---|
| * | * | * |
|---|
| 0.750 | 0.544 | 2277 |
|---|
| 0.800 | 0.503 | 2464 |
|---|
| 0.850 | 0.464 | 2671 |
|---|
| 0.900 | 0.427 | 2902 |
|---|
| 0.950 | 0.393 | 3159 |
|---|
| * | * | * |
|---|
| 1.000 | 0.360 | 3444 |
|---|
| * | * | * |
|---|
| 0.530 | 0.752 | 1649 |
|---|
| * | * | * |
|---|
| |
The alloy having x
equal to 0.530
is lattice matched to InP. |
|
|
I shall be glad to be informed of references to any appropriate
Eg(InGaAs) data published after those of 1978 given above.
d.w.palmer@semiconductors.co.uk
|
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