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ENERGY-GAP VALUES for AlxGa1-xAs at 293K
Author - d.w.palmer@semiconductors.co.uk

When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2000.12.


Data Reference:   M El Allali et al, Phys.Rev.B 48 (1993) 4398-4404,

from which the data in the table below for the direct energy gap Eg for AlxGa1-xAs at 293K,
for x between 0 and 0.44, have been calculated by use of the formula
Eg(x) = Eg(GaAs) + 1.429eV*x - 0.14eV*x2
given in that paper as the best fit to the experimental data.

For x > 0.44, the indirect energy gap is smaller than the direct gap.


Aluminium
Content
x 		Energy Gap
Eg
eV 		Corresponding
Optical Wavelength
nm
0.0001.424870.8
0.0101.438862.1
0.020 1.453853.7
0.0301.467 845.4
0.0401.481837.3
***
0.0501.495829.4
0.0601.509 821.6
0.0701.523814.0
0.0801.537806.5
0.090 1.551799.2
***
0.1001.565792.1
0.1101.579785.1
0.1201.593778.2
0.1301.607771.4
0.1401.621764.8
***
0.1501.635758.3
0.1601.649751.9
0.1701.663745.7
0.1801.677739.6
0.1901.690733.5
***
0.2001.704727.6
0.2101.718721.8
0.2201.732716.1
0.2301.745710.5
0.2401.759705.0
  
Aluminium
Content
x 		Energy Gap
Eg
eV 		Corresponding
Optical Wavelength
nm
0.2501.773699.6
0.2601.786694.3
0.2701.800689.0
0.2801.813683.9
0.2901.827678.8
***
0.3001.840673.9
0.3101.854669.0
0.3201.867664.2
0.3301.880659.5
0.3401.894654.8
***
0.3501.907650.2
0.3601.920645.7
0.3701.934641.3
0.3801.947636.9
0.3901.960632.6
***
0.4001.973628.4
0.410 1.986624.3
0.420 1.999620.2
0.4302.013616.1
0.4402.026612.1


Earlier papers giving data on the energy gap values for AlxGa1-xAs are as follows:

C C Shen and D H Hartman in "Gallium Arsenide Technology"
(ed. D K Ferry; published by Howard W Sams Inc, USA, 1985): Eg(0.440) = 2.031eV

H C Casey Jr and M B Panish in "Heterostructure Lasers" (Academic Press, 1978): Eg(0.440) = 1.973eV

 
















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