ENERGY-GAP VALUES for AlxGa1-xAs at 293K
Author -
d.w.palmer@semiconductors.co.uk
When quoting data from here, please state the reference as
D W Palmer, www.semiconductors.co.uk, 2000.12.
Data Reference: M El Allali et al, Phys.Rev.B 48 (1993) 4398-4404,
from which the data in the table below for the direct energy gap
Eg for AlxGa1-xAs at 293K,
for x between 0 and 0.44, have been calculated by use of the formula
Eg(x) = Eg(GaAs) + 1.429eV*x - 0.14eV*x2
given in that paper as the best fit to the experimental data.
For x > 0.44, the indirect energy gap is smaller than the direct gap.
Aluminium
Content
x
|
Energy Gap
Eg
eV
|
Corresponding
Optical Wavelength
nm
|
| 0.000 | 1.424 | 870.8 |
|---|
| 0.010 | 1.438 | 862.1 |
|---|
| 0.020 | 1.453 | 853.7 |
|---|
| 0.030 | 1.467 | 845.4 |
|---|
| 0.040 | 1.481 | 837.3 |
|---|
| * | * | * |
|---|
| 0.050 | 1.495 | 829.4 |
|---|
| 0.060 | 1.509 | 821.6 |
|---|
| 0.070 | 1.523 | 814.0 |
|---|
| 0.080 | 1.537 | 806.5 |
|---|
| 0.090 | 1.551 | 799.2 |
|---|
| * | * | * |
|---|
| 0.100 | 1.565 | 792.1 |
|---|
| 0.110 | 1.579 | 785.1 |
|---|
| 0.120 | 1.593 | 778.2 |
|---|
| 0.130 | 1.607 | 771.4 |
|---|
| 0.140 | 1.621 | 764.8 |
|---|
| * | * | * |
|---|
| 0.150 | 1.635 | 758.3 |
|---|
| 0.160 | 1.649 | 751.9 |
|---|
| 0.170 | 1.663 | 745.7 |
|---|
| 0.180 | 1.677 | 739.6 |
|---|
| 0.190 | 1.690 | 733.5 |
|---|
| * | * | * |
|---|
| 0.200 | 1.704 | 727.6 |
|---|
| 0.210 | 1.718 | 721.8 |
|---|
| 0.220 | 1.732 | 716.1 |
|---|
| 0.230 | 1.745 | 710.5 |
|---|
| 0.240 | 1.759 | 705.0 |
|---|
|
|
Aluminium
Content
x
|
Energy Gap
Eg
eV
|
Corresponding
Optical Wavelength
nm
|
| 0.250 | 1.773 | 699.6 |
|---|
| 0.260 | 1.786 | 694.3 |
|---|
| 0.270 | 1.800 | 689.0 |
|---|
| 0.280 | 1.813 | 683.9 |
|---|
| 0.290 | 1.827 | 678.8 |
|---|
| * | * | * |
|---|
| 0.300 | 1.840 | 673.9 |
|---|
| 0.310 | 1.854 | 669.0 |
|---|
| 0.320 | 1.867 | 664.2 |
|---|
| 0.330 | 1.880 | 659.5 |
|---|
| 0.340 | 1.894 | 654.8 |
|---|
| * | * | * |
|---|
| 0.350 | 1.907 | 650.2 |
|---|
| 0.360 | 1.920 | 645.7 |
|---|
| 0.370 | 1.934 | 641.3 |
|---|
| 0.380 | 1.947 | 636.9 |
|---|
| 0.390 | 1.960 | 632.6 |
|---|
| * | * | * |
|---|
| 0.400 | 1.973 | 628.4 |
|---|
| 0.410 | 1.986 | 624.3 |
|---|
| 0.420 | 1.999 | 620.2 |
|---|
| 0.430 | 2.013 | 616.1 |
|---|
| 0.440 | 2.026 | 612.1 |
|---|
|
Earlier papers giving data on the energy gap values
for AlxGa1-xAs are as follows:
C C Shen and D H Hartman in "Gallium Arsenide Technology"
(ed. D K Ferry; published by Howard W Sams Inc,
USA, 1985): Eg(0.440) = 2.031eV
H C Casey Jr and M B Panish in "Heterostructure Lasers"
(Academic Press, 1978): Eg(0.440) = 1.973eV
|
|
|